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Journal of Nanoscience and Nanotechnology|January 6, 2021
Numerical Investigation of Light Extraction Efficiency of GaN-based Vertical Blue Micron-Scale Light-Emitting Diode StructuresJeongsang Pyo, Hyun Yeol Ryu, Han-Youl RyuOptics Express|September 29, 2020
Temperature dependence of the Auger recombination coefficient in InGaN/GaN multiple-quantum-well light-emitting diodesHan-Youl Ryu, Geun-Hwan Ryu, Chibuzo Onwukaeme, et al.Optics Express|May 29, 2009
High quality-factor whispering-gallery mode in the photonic crystal hexagonal disk cavityHan-Youl Ryu, Masaya Notomi, Guk-Hyun Kim, et al.Nanophotonics (Berlin, Germany)|December 5, 2024
Nanophotonic route to control electron behaviors in 2D materialsDongJun Kang, Chibuzo Onwukaeme, KiJeong Park, et al.Optics Express|February 8, 2013
Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layerHan-Youl Ryu, Ki-Seong Jeon, Min-Goo Kang, et al.Journal of Nanoscience and Nanotechnology|September 17, 2015
Effect of Light Absorption in InGaN/GaN Vertical Light-Emitting DiodesJunho Sung, Ki-Seong Jeon, Min Woo Lee, et al.Pageof 2