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Nanoscale|July 27, 2022
Morphology and carrier mobility of high-B-content B<sub></sub>Al<sub>1-</sub>N ternary alloys from an <i>ab initio</i> global searchZhanbin Qi, Zhiming Shi, Hang Zang, et al.
Materials (Basel, Switzerland)|August 23, 2020
Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio CalculationsHuan He, Wenbo Liu, Pengbo Zhang, et al.
ACS Applied Materials & Interfaces|June 22, 2023
Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive DeviceYang Chen, Zhiming Shi, Shanli Zhang, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|July 26, 2021
Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles InvestigationHang Zang, Xiaojuan Sun, Ke Jiang, et al.
ACS Applied Materials & Interfaces|September 20, 2024
Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering StrategyXiaobao Ma, Zhiming Shi, Hang Zang, et al.
ACS Applied Materials & Interfaces|August 12, 2022
Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat DissipationYang Chen, Hang Zang, Shanli Zhang, et al.
ACS Applied Materials & Interfaces|July 27, 2021
Point Defects in Monolayer <i>h</i>-AlN as Candidates for Single-Photon EmissionZhiming Shi, Zhanbin Qi, Hang Zang, et al.
Small (Weinheim an Der Bergstrasse, Germany)|June 27, 2025
A (111) Facet-Dominated Carbon Dots-Perovskite Composite Crystal Matrix for Highly Stable PhotodetectorYing Li, Jun Xing, Rongxue Zhou, et al.
Nanoscale Advances|January 18, 2024
The AlN lattice-polarity inversion in a high-temperature-annealed <i>c</i>-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphireKe Jiang, Jianwei Ben, Xiaojuan Sun, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 12, 2025
Efficient n-Type Doping of Hexagonal Boron Nitride via Localized Band-Offset Compensation StrategyXiaobao Ma, Zhiming Shi, Hang Zang, et al.
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