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Hans Wenzel

Showing results (1-10 of 17) with videos related to

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Optics Letters|October 3, 2008
High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13 degreesAgnieszka Pietrzak, Hans Wenzel, Götz Erbert, et al.
Optics Letters|March 14, 2025
Dynamical simulations of single-mode lasing in large-area all-semiconductor PCSELsMindaugas Radziunas, Hans Wenzel, Ben King, et al.
Applied Optics|May 15, 2013
Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier systemSven Schwertfeger, Andreas Klehr, Thomas Hoffmann, et al.
Optics Letters|June 5, 2012
High peak power optical pulses generated with a monolithic master-oscillator power amplifierHans Wenzel, Sven Schwertfeger, Andreas Klehr, et al.
Optics Express|October 7, 2021
Spatially modulated broad-area lasers for narrow lateral far-field divergenceAnissa Zeghuzi, Jan-Philipp Koester, Mindaugas Radziunas, et al.
Optics Letters|August 29, 2014
Tunable 975 nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3 W peak power and narrow spectral linewidth below 10 pmThi Nghiem Vu, Andreas Klehr, Bernd Sumpf, et al.
Applied Optics|February 4, 2017
Method for in-depth characterization of electro-optic phase modulatorsBassem Arar, Max Schiemangk, Hans Wenzel, et al.
Optics Express|November 11, 2022
Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavityEwoud Vissers, Stijn Poelman, Hans Wenzel, et al.
Optics Express|April 20, 2011
Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHzStefan Spiessberger, Max Schiemangk, Alexander Sahm, et al.
Applied Optics|October 20, 2017
Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nmHeike Christopher, Evgeny V Kovalchuk, Hans Wenzel, et al.
Pageof 2

Showing results (1-10 of 17) with videos related to

Sort By:
Pageof 2
Optics Letters|October 3, 2008
High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13 degreesAgnieszka Pietrzak, Hans Wenzel, Götz Erbert, et al.
Optics Letters|March 14, 2025
Dynamical simulations of single-mode lasing in large-area all-semiconductor PCSELsMindaugas Radziunas, Hans Wenzel, Ben King, et al.
Applied Optics|May 15, 2013
Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator-power amplifier systemSven Schwertfeger, Andreas Klehr, Thomas Hoffmann, et al.
Optics Letters|June 5, 2012
High peak power optical pulses generated with a monolithic master-oscillator power amplifierHans Wenzel, Sven Schwertfeger, Andreas Klehr, et al.
Optics Express|October 7, 2021
Spatially modulated broad-area lasers for narrow lateral far-field divergenceAnissa Zeghuzi, Jan-Philipp Koester, Mindaugas Radziunas, et al.
Optics Letters|August 29, 2014
Tunable 975 nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3 W peak power and narrow spectral linewidth below 10 pmThi Nghiem Vu, Andreas Klehr, Bernd Sumpf, et al.
Applied Optics|February 4, 2017
Method for in-depth characterization of electro-optic phase modulatorsBassem Arar, Max Schiemangk, Hans Wenzel, et al.
Optics Express|November 11, 2022
Hybrid integrated mode-locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavityEwoud Vissers, Stijn Poelman, Hans Wenzel, et al.
Optics Express|April 20, 2011
Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHzStefan Spiessberger, Max Schiemangk, Alexander Sahm, et al.
Applied Optics|October 20, 2017
Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nmHeike Christopher, Evgeny V Kovalchuk, Hans Wenzel, et al.
Pageof 2