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Micromachines|November 9, 2018
A Novel One-Transistor Dynamic Random-Access Memory (1T DRAM) Featuring Partially Inserted Wide-Bandgap Double Barriers for High-Temperature ApplicationsMyeongsun Kim, Jongmin Ha, Ikhyeon Kwon, et al.Journal of Nanoscience and Nanotechnology|January 5, 2016
Analyses on RF Performances of Silicon-Compatible InGaAs-Based Planar-Type and Fin-Type Junctionless Field-Effect TransistorsJae Hwa Seo, Young Jun Yoon, Seongjae Cho, et al.Nanotechnology|February 24, 2017
Nano-cone resistive memory for ultralow power operationSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.Optics Express|April 7, 2017
InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operationSungjoon Kim, Seongjae Cho, Jaedeok Jeong, et al.Micromachines|January 10, 2019
Design and Characterization of Semi-Floating-Gate Synaptic TransistorYongbeom Cho, Jae Yoon Lee, Eunseon Yu, et al.Materials (Basel, Switzerland)|July 19, 2021
Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVDJongwan Jung, Baegmo Son, Byungmin Kam, et al.Journal of Nanoscience and Nanotechnology|May 15, 2015
Ablation of graphene film by direct Nd:YVO4 laser under various beaming conditionsJeongmin Lee, Jae-Hee Han, Jung-Hun Lee, et al.Scientific Reports|November 23, 2024
Charge-trap synaptic device with polycrystalline silicon channel for low power in-memory computingMin-Kyu Park, Joon Hwang, Soomin Kim, et al.Physical Chemistry Chemical Physics : PCCP|December 2, 2021
Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approachYeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, et al.Journal of Nanoscience and Nanotechnology|May 12, 2015
Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applicationsYoung Jun Yoon, Jae Hwa Seo, Eou-Sik Cho, et al.Pageof 5