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Hao-Hsiung Lin

Showing results (1-10 of 15) with videos related to

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Materials (Basel, Switzerland)|March 14, 2026
Vibrational Characteristics of High-Quality MBE Grown GaAs<sub>1-x-y</sub>Sb<sub>y</sub>N<sub>x</sub>/GaAs (001) EpilayersDevki N Talwar, Hao-Hsiung Lin
Materials (Basel, Switzerland)|June 26, 2026
Simulating Model Dielectric Functions of Dilute GaAs<sub>1-x</sub>N<sub>x</sub> in the Far-Infrared to Ultraviolet Wavelength RegimesDevki N Talwar, Hao-Hsiung Lin
Scientific Reports|February 18, 2022
Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxyChieh Chou, Bo-Xun Wu, Hao-Hsiung Lin
Scientific Reports|November 13, 2023
Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrateChia-Hsuan Wu, Chieh Chou, Hao-Hsiung Lin
Nanomaterials (Basel, Switzerland)|April 11, 2025
A Modified Model Dielectric Function for Analyzing Optical Spectra of InGaN Nanofilms on Sapphire SubstratesDevki N Talwar, Hao-Hsiung Lin, Jason T Haraldsen
Optics Letters|May 1, 2015
InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4  μmYen-Chih Lin, Ming-Hua Mao, Chen-Jun Wu, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|December 10, 2015
Effect of Focused Ion Beam Imaging on the Crystallinity of InAsWei-Chieh Chen, Tien-Hao Huang, Kuan-Chao Chen, et al.
Scientific Reports|July 3, 2019
A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire DevicesCheng-Hao Chu, Ming-Hua Mao, Che-Wei Yang, et al.
Scientific Reports|April 7, 2020
A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning ExcitationCheng-Hao Chu, Ming-Hua Mao, You-Ru Lin, et al.
Materials (Basel, Switzerland)|February 25, 2023
Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche PhotodiodesYu-Chun Chen, Ruei-Hong Yan, Hsu-Chia Huang, et al.
Pageof 2

Showing results (1-10 of 15) with videos related to

Sort By:
Pageof 2
Materials (Basel, Switzerland)|March 14, 2026
Vibrational Characteristics of High-Quality MBE Grown GaAs<sub>1-x-y</sub>Sb<sub>y</sub>N<sub>x</sub>/GaAs (001) EpilayersDevki N Talwar, Hao-Hsiung Lin
Materials (Basel, Switzerland)|June 26, 2026
Simulating Model Dielectric Functions of Dilute GaAs<sub>1-x</sub>N<sub>x</sub> in the Far-Infrared to Ultraviolet Wavelength RegimesDevki N Talwar, Hao-Hsiung Lin
Scientific Reports|February 18, 2022
Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxyChieh Chou, Bo-Xun Wu, Hao-Hsiung Lin
Scientific Reports|November 13, 2023
Strain and atomic stacking of bismuth thin film in its quasi-van der Waals epitaxy on (111) Si substrateChia-Hsuan Wu, Chieh Chou, Hao-Hsiung Lin
Nanomaterials (Basel, Switzerland)|April 11, 2025
A Modified Model Dielectric Function for Analyzing Optical Spectra of InGaN Nanofilms on Sapphire SubstratesDevki N Talwar, Hao-Hsiung Lin, Jason T Haraldsen
Optics Letters|May 1, 2015
InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4  μmYen-Chih Lin, Ming-Hua Mao, Chen-Jun Wu, et al.
Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|December 10, 2015
Effect of Focused Ion Beam Imaging on the Crystallinity of InAsWei-Chieh Chen, Tien-Hao Huang, Kuan-Chao Chen, et al.
Scientific Reports|July 3, 2019
A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire DevicesCheng-Hao Chu, Ming-Hua Mao, Che-Wei Yang, et al.
Scientific Reports|April 7, 2020
A New Fitting Method for Ambipolar Diffusion Length Extraction in Thin Film Structures Using Photoluminescence Measurement with Scanning ExcitationCheng-Hao Chu, Ming-Hua Mao, You-Ru Lin, et al.
Materials (Basel, Switzerland)|February 25, 2023
Guard Ring Design to Prevent Edge Breakdown in Double-Diffused Planar InGaAs/InP Avalanche PhotodiodesYu-Chun Chen, Ruei-Hong Yan, Hsu-Chia Huang, et al.
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