Haruki Uchiyama - JoVE Visualize

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Small (Weinheim an Der Bergstrasse, Germany)|January 11, 2023

A Monolayer MoS<sub>2</sub> FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er<sub>2</sub> O<sub>3</sub> Insulator Through Thermal EvaporationHaruki Uchiyama, Kohei Maruyama, Edward Chen, et al.

ACS Omega|August 29, 2019

Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy CentersHaruki Uchiyama, Soya Saijo, Shigeru Kishimoto, et al.

ACS Applied Materials & Interfaces|May 24, 2023

p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate TransistorsRyoichi Kato, Haruki Uchiyama, Tomonori Nishimura, et al.

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Showing results (1-10 of 3) with videos related to

Sort By:

Pageof 1

Small (Weinheim an Der Bergstrasse, Germany)|January 11, 2023

A Monolayer MoS<sub>2</sub> FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er<sub>2</sub> O<sub>3</sub> Insulator Through Thermal EvaporationHaruki Uchiyama, Kohei Maruyama, Edward Chen, et al.

ACS Omega|August 29, 2019

Operando Analysis of Electron Devices Using Nanodiamond Thin Films Containing Nitrogen-Vacancy CentersHaruki Uchiyama, Soya Saijo, Shigeru Kishimoto, et al.

ACS Applied Materials & Interfaces|May 24, 2023

p-Type Conversion of WS<sub>2</sub> and WSe<sub>2</sub> by Position-Selective Oxidation Doping and Its Application in Top Gate TransistorsRyoichi Kato, Haruki Uchiyama, Tomonori Nishimura, et al.

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