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Fundamental Research|April 17, 2025
Gallium oxide (Ga2O3) heterogeneous and heterojunction power devicesBochang Li, Yibo Wang, Zhengdong Luo, et al.Nature Communications|March 24, 2026
Cryogenic neuromorphic circuits using gate-controlled negative differential resistance in silicon carbideXin Yang, Matthew Porter, Yuan Qin, et al.The Journal of Physical Chemistry Letters|January 10, 2024
Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual AttentionKe Xu, Baocheng Peng, Huiwu Mao, et al.The Journal of Physical Chemistry Letters|July 28, 2022
Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga2O3Zhengpeng Wang, Xinxin Yu, Hehe Gong, et al.Nature Communications|March 30, 2026
A megawatt ultra-wide bandgap semiconductor module for pulsed power electronicsHehe Gong, Xin Yang, Boyan Wang, et al.Science Advances|November 19, 2025
Heterogeneous integration of ultrawide bandgap semiconductors for radio frequency power devicesHong Zhou, Min Zhou, Mingjie Xiang, et al.Nature Communications|July 25, 2023
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronicsFeng Zhou, Hehe Gong, Ming Xiao, et al.Nature Communications|December 18, 2025
High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxyHong Zhou, Chaoqun Zhang, Kun Zhang, et al.Pageof 1