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Small (Weinheim an Der Bergstrasse, Germany)
|
September 26, 2012
Bonding and electronic transport properties of fullerene and fullerene derivatives in break-junction geometries
Emanuel Lörtscher, Victor Geskin, Bernd Gotsmann, et al.
Nanotechnology
|
November 29, 2012
In situ doping of catalyst-free InAs nanowires
Hesham Ghoneim, Philipp Mensch, Heinz Schmid, et al.
Nanotechnology
|
December 8, 2018
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Mattias Borg, Lynne Gignac, John Bruley, et al.
ACS Applied Materials & Interfaces
|
August 31, 2018
Dopant-Induced Modifications of Ga <sub>x</sub>In<sub>(1- x)</sub>P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)
Nicolas Bologna, Stephan Wirths, Luca Francaviglia, et al.
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of 5
Search research articles
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Showing results (41-50 of 44) with videos related to
Sort By:
Page
of 5
You have reached the last page of results.
This site can display upto 44 results.
Small (Weinheim an Der Bergstrasse, Germany)
|
September 26, 2012
Bonding and electronic transport properties of fullerene and fullerene derivatives in break-junction geometries
Emanuel Lörtscher, Victor Geskin, Bernd Gotsmann, et al.
Nanotechnology
|
November 29, 2012
In situ doping of catalyst-free InAs nanowires
Hesham Ghoneim, Philipp Mensch, Heinz Schmid, et al.
Nanotechnology
|
December 8, 2018
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Mattias Borg, Lynne Gignac, John Bruley, et al.
ACS Applied Materials & Interfaces
|
August 31, 2018
Dopant-Induced Modifications of Ga <sub>x</sub>In<sub>(1- x)</sub>P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)
Nicolas Bologna, Stephan Wirths, Luca Francaviglia, et al.
Page
of 5