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Science (New York, N.Y.)|April 18, 1997
Atomistic Processes in the Early Stages of Thin-Film GrowthZhang, LagallyScience (New York, N.Y.)|November 21, 1997
Adatom pairing structures for Ge on si(100): the initial stage of island formationQin, LagallyPhysical Review Letters|September 16, 2000
Nucleationless three-dimensional island formation in low-misfit heteroepitaxySutter, LagallyPhysical Review Letters|October 13, 2000
Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopyQin, Swartzentruber, LagallyPhysical Review Letters|September 16, 2000
Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coveragesQin, Swartzentruber, LagallyPhysical Review Letters|September 6, 2000
Equilibrium shape of two-dimensional islands under stressLi, Liu, LagallyNanoscale Research Letters|November 17, 2012
Semiconductor nanomembranes: a platform for new properties via strain engineeringFrancesca Cavallo, Max G LagallyNanomaterials (Basel, Switzerland)|June 9, 2018
Optical Properties of Tensilely Strained Ge NanomembranesRoberto Paiella, Max G LagallyPhysical Review Letters|September 6, 2000
Thermal roughening of a thin film: A new type of roughening transitionMaxson, Savage, Liu, et al.Science (New York, N.Y.)|July 22, 1994
Fabrication of atomic-scale structures on si(001) surfacesC T Salling, M G LagallyPageof 164,789