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Materials (Basel, Switzerland)|November 11, 2022
Applicability of Pre-Plastic Deformation Method for Improving Mechanical Properties of Bulk Metallic GlassesChangshan Zhou, Hezhi Zhang, Xudong Yuan, et al.Micromachines|June 26, 2026
A Backside-Electrode-Free Lateral 4H-SiC JFET with Three-Terminal Dual-Gate Design for Stable DC Operation at 500 °CYuting Tang, Qian Luo, Jiang Zhu, et al.Journal of Intelligence|April 25, 2025
Automated Graphic Divergent Thinking Assessment: A Multimodal Machine Learning ApproachHezhi Zhang, Hang Dong, Ying Wang, et al.Nanotechnology|October 29, 2015
Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatmentHezhi Zhang, Gwénolé Jacopin, Vladimir Neplokh, et al.Materials (Basel, Switzerland)|April 13, 2023
The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1-x)2O3 Intermediate Buffer LayerWenhui Zhang, Hezhi Zhang, Song Zhang, et al.Nanoscale Research Letters|November 19, 2015
Substrate-Free InGaN/GaN Nanowire Light-Emitting DiodesVladimir Neplokh, Agnes Messanvi, Hezhi Zhang, et al.Nano Letters|September 1, 2015
Flexible Light-Emitting Diodes Based on Vertical Nitride NanowiresXing Dai, Agnes Messanvi, Hezhi Zhang, et al.ACS Photonics|June 23, 2016
Flexible White Light Emitting Diodes Based on Nitride Nanowires and NanophosphorsNan Guan, Xing Dai, Agnès Messanvi, et al.Nano Letters|July 15, 2016
Epitaxy of GaN Nanowires on GrapheneVishnuvarthan Kumaresan, Ludovic Largeau, Ali Madouri, et al.ACS Applied Materials & Interfaces|September 13, 2016
Flexible Photodiodes Based on Nitride Core/Shell p-n Junction NanowiresHezhi Zhang, Xing Dai, Nan Guan, et al.Pageof 1