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Hojeong Ryu

Showing results (1-10 of 7) with videos related to

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Nanomaterials (Basel, Switzerland)|December 15, 2020
Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current OvershootHojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|October 21, 2020
Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al<sub>2</sub>O<sub>3</sub>/TiN StackHojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|November 3, 2020
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i></i>/TiN Artificial Synaptic DeviceHojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|August 14, 2020
Pseudo-Interface Switching of a Two-Terminal TaO<i></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic ApplicationsHojeong Ryu, Sungjun Kim
Scientific Reports|August 17, 2021
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemJongmin Park, Hojeong Ryu, Sungjun Kim
Applied Optics|October 22, 2008
Influence of surface roughness on the polarimetric characteristics of a wire-grid grating polarizerHojeong Ryu, Soon Joon Yoon, Donghyun Kim
ACS Applied Materials & Interfaces|July 12, 2021
Tunable Synaptic Characteristics of a Ti/TiO<sub>2</sub>/Si Memory Device for Reservoir ComputingJinwoong Yang, Hyojong Cho, Hojeong Ryu, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Nanomaterials (Basel, Switzerland)|December 15, 2020
Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current OvershootHojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|October 21, 2020
Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al<sub>2</sub>O<sub>3</sub>/TiN StackHojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|November 3, 2020
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO<sub>2</sub>/TaO<i></i>/TiN Artificial Synaptic DeviceHojeong Ryu, Sungjun Kim
Nanomaterials (Basel, Switzerland)|August 14, 2020
Pseudo-Interface Switching of a Two-Terminal TaO<i></i>/HfO<sub>2</sub> Synaptic Device for Neuromorphic ApplicationsHojeong Ryu, Sungjun Kim
Scientific Reports|August 17, 2021
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemJongmin Park, Hojeong Ryu, Sungjun Kim
Applied Optics|October 22, 2008
Influence of surface roughness on the polarimetric characteristics of a wire-grid grating polarizerHojeong Ryu, Soon Joon Yoon, Donghyun Kim
ACS Applied Materials & Interfaces|July 12, 2021
Tunable Synaptic Characteristics of a Ti/TiO<sub>2</sub>/Si Memory Device for Reservoir ComputingJinwoong Yang, Hyojong Cho, Hojeong Ryu, et al.
Pageof 1