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Nano Letters|July 3, 2018
Modification of the Potential Landscape of Molecular Rotors on Au(111) by the Presence of an STM TipHong-Liang Lu, Yun Cao, Jing Qi, et al.
ACS Applied Materials & Interfaces|June 17, 2020
Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching MemoryXing Li, Jian-Guo Yang, Hong-Ping Ma, et al.
Nanotechnology|February 3, 2021
Dual-gate MoS2phototransistor with atomic-layer-deposited HfO2as top-gate dielectric for ultrahigh photoresponsivityXiao-Xi Li, Xin-Yu Chen, Jin-Xin Chen, et al.
Nanomaterials (Basel, Switzerland)|December 20, 2018
Measurements of Microstructural, Chemical, Optical, and Electrical Properties of Silicon-Oxygen-Nitrogen Films Prepared by Plasma-Enhanced Atomic Layer DepositionHong-Ping Ma, Hong-Liang Lu, Jia-He Yang, et al.
Nanotechnology|May 13, 2020
High-energy x-ray radiation effects on the exfoliated quasi-two-dimensional β-Ga2O3 nanoflake field-effect transistorsJin-Xin Chen, Xiao-Xi Li, Wei Huang, et al.
Nanoscale Research Letters|February 28, 2013
Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer depositionZhi-Yuan Ye, Hong-Liang Lu, Yang Geng, et al.
ACS Applied Materials & Interfaces|December 7, 2017
Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance SupercapacitorsQing-Hua Ren, Yan Zhang, Hong-Liang Lu, et al.
Nanomaterials (Basel, Switzerland)|January 6, 2019
Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO₂ Super-LatticeHong-Ping Ma, Jia-He Yang, Jian-Guo Yang, et al.
Nanoscale|September 2, 2021
High optoelectronic performance of a local-back-gate ReS2/ReSe2 heterojunction phototransistor with hafnium oxide dielectricYu-Chun Li, Xiao-Xi Li, Guang Zeng, et al.
Nanoscale Research Letters|February 10, 2017
Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer DepositionLong Sun, Hong-Liang Lu, Hong-Yan Chen, et al.
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