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Optics Express|December 31, 2020
Strategically constructed patterned sapphire with silica array to boost substrate performance in GaN-based flip-chip visible light-emitting diodesShuyu Lan, Bin Tang, Hongpo Hu, et al.Optics Express|October 7, 2021
Toward efficient long-wavelength III-nitride emitters using a hybrid nucleation layerBin Tang, Liyan Gong, Hongpo Hu, et al.Scientific Reports|March 16, 2017
Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodesHongpo Hu, Shengjun Zhou, Xingtong Liu, et al.Nanomaterials (Basel, Switzerland)|November 21, 2019
Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting DiodesJie Zhao, Hongpo Hu, Yu Lei, et al.Scientific Reports|March 7, 2019
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layerHongpo Hu, Shengjun Zhou, Hui Wan, et al.Applied Optics|October 20, 2017
Reflectance bandwidth and efficiency improvement of light-emitting diodes with double-distributed Bragg reflectorXinghuo Ding, Chengqun Gui, Hongpo Hu, et al.Applied Optics|December 8, 2017
Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDsXingtong Liu, Shengjun Zhou, Yilin Gao, et al.Pageof 1