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Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|May 7, 2026
Sustainable Synaptic Device with Two-Dimensional Ferroelectric Materials for Neuromorphic ComputingJaewook Yoo, Seokjin Oh, Minah Park, et al.Nano Letters|June 10, 2025
Unveiling Radiation-Tolerant Thickness in a-IGZO Thin-Film Transistors with Sub-10 nm Film and Restoring Abnormalities via Energy-Efficient Electrothermal AnnealingSojin Jung, Jaewook Yoo, Hongseung Lee, et al.ACS Applied Materials & Interfaces|June 11, 2026
Exploring Spatial Distribution of Intrinsic Oxide Trap by Decoupling Channel Thickness Effects in Amorphous IGZO TFTsDonghyeon Lee, Jaewook Yoo, Hongseung Lee, et al.ACS Applied Materials & Interfaces|December 31, 2024
Low-Frequency Noise Related to the Scattering Effect in p-Type Copper(I) Oxide Thin-Film TransistorsJaewook Yoo, Seohyeon Park, Hongseung Lee, et al.ACS Applied Materials & Interfaces|June 10, 2026
Metal-Induced Oxygen Diffusion-Aware Design of a-IGZO TFTs for Boosting PerformanceSojin Jung, Seongbin Lim, Hongseung Lee, et al.Small (Weinheim an Der Bergstrasse, Germany)|May 8, 2026
Reconfigurable Adaptive Synapse and Logic Device by Ambipolar Ferroelectric SemiconductorJaewook Yoo, Minah Park, Seokjin Oh, et al.Pageof 1