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Scientific Reports|October 29, 2023
Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emissionGrey Abernathy, Solomon Ojo, Abdulla Said, et al.
Nanoscale Research Letters|April 9, 2015
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrateHryhorii Stanchu, Vasyl Kladko, Andrian V Kuchuk, et al.
Optics Letters|May 24, 2023
Investigation of the cap layer for improved GeSn multiple quantum well laser performanceGrey Abernathy, Solomon Ojo, Hryhorii Stanchu, et al.
ACS Applied Materials & Interfaces|June 26, 2026
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic OrientationsAida Sheibani, Mohammad Zamani-Alavijeh, Charles Paillard, et al.
RSC Advances|January 4, 2024
The growth of Ge and direct bandgap Ge<sub>1-</sub>Sn<sub></sub> on GaAs (001) by molecular beam epitaxyCalbi Gunder, Fernando Maia de Oliveira, Emmanuel Wangila, et al.
Crystal Growth & Design|July 6, 2026
Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge<sub>0.85</sub>Sn<sub>0.15</sub> on Ge(001)Dinesh Baral, Nirosh M Eldose, Diandian Zhang, et al.
Small Science|May 11, 2026
Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder ScatteringTroy A Hutchins-Delgado, Siddhant Gangwal, Steven Akwabli, et al.
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