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Hsin-Chin Chen

Showing results (1-10 of 14) with videos related to

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Psychonomic Bulletin & Review|August 9, 2006
Proverb preferences across cultures: dialecticality or poeticality?Mike Friedman, Hsin-Chin Chen, Jyotsna Vaid
Experimental Brain Research|November 14, 2007
Optical imaging of phonological processing in two distinct orthographiesHsin-Chin Chen, Jyotsna Vaid, Heather Bortfeld, et al.
Human Brain Mapping|August 7, 2010
Examining the phonological neighborhood density effect using near infrared spectroscopyHsin-Chin Chen, Jyotsna Vaid, David A Boas, et al.
Behavior Research Methods|February 7, 2020
Multi-time-point analysis: A time course analysis with functional near-infrared spectroscopyChi-Lin Yu, Hsin-Chin Chen, Zih-Yun Yang, et al.
Nanomaterials (Basel, Switzerland)|March 26, 2025
Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory DevicesKai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, et al.
Sensors (Basel, Switzerland)|December 4, 2012
Developing a reading concentration monitoring system by applying an artificial bee colony algorithm to e-books in an intelligent classroomChia-Cheng Hsu, Hsin-Chin Chen, Yen-Ning Su, et al.
Neuroimage|October 11, 2025
Developmental changes in phonological awareness in Chinese-English bilingual children: An fNIRS longitudinal studyYueh-Lin Li, Li-Ying Fan, Hsin-Chin Chen, et al.
Micromachines|August 28, 2025
Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory DevicesKai-Huang Chen, Chien-Min Cheng, Ming-Cheng Kao, et al.
Micromachines|November 27, 2025
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM DevicesKai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, et al.
Nanomaterials (Basel, Switzerland)|April 25, 2025
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory DevicesYao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, et al.
Pageof 2

Showing results (1-10 of 14) with videos related to

Sort By:
Pageof 2
Psychonomic Bulletin & Review|August 9, 2006
Proverb preferences across cultures: dialecticality or poeticality?Mike Friedman, Hsin-Chin Chen, Jyotsna Vaid
Experimental Brain Research|November 14, 2007
Optical imaging of phonological processing in two distinct orthographiesHsin-Chin Chen, Jyotsna Vaid, Heather Bortfeld, et al.
Human Brain Mapping|August 7, 2010
Examining the phonological neighborhood density effect using near infrared spectroscopyHsin-Chin Chen, Jyotsna Vaid, David A Boas, et al.
Behavior Research Methods|February 7, 2020
Multi-time-point analysis: A time course analysis with functional near-infrared spectroscopyChi-Lin Yu, Hsin-Chin Chen, Zih-Yun Yang, et al.
Nanomaterials (Basel, Switzerland)|March 26, 2025
Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film's Resistance and Random Access Memory DevicesKai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, et al.
Sensors (Basel, Switzerland)|December 4, 2012
Developing a reading concentration monitoring system by applying an artificial bee colony algorithm to e-books in an intelligent classroomChia-Cheng Hsu, Hsin-Chin Chen, Yen-Ning Su, et al.
Neuroimage|October 11, 2025
Developmental changes in phonological awareness in Chinese-English bilingual children: An fNIRS longitudinal studyYueh-Lin Li, Li-Ying Fan, Hsin-Chin Chen, et al.
Micromachines|August 28, 2025
Impact of Rapid Thermal Annealing and Oxygen Concentration on Symmetry Bipolar Switching Characteristics of Tin Oxide-Based Memory DevicesKai-Huang Chen, Chien-Min Cheng, Ming-Cheng Kao, et al.
Micromachines|November 27, 2025
Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM DevicesKai-Huang Chen, Ming-Cheng Kao, Hsin-Chin Chen, et al.
Nanomaterials (Basel, Switzerland)|April 25, 2025
Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory DevicesYao-Chin Wang, Kai-Huang Chen, Ming-Cheng Kao, et al.
Pageof 2