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Sensors (Basel, Switzerland)|June 10, 2022
Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon PhotonicsSoumava Ghosh, Radhika Bansal, Greg Sun, et al.
Nanotechnology|July 17, 2020
Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applicationsYeh-Chen Tai, Po-Lun Yeh, Shu An, et al.
Sensors (Basel, Switzerland)|September 9, 2023
Dark Current Analysis on GeSn <i>p-i-n</i> PhotodetectorsSoumava Ghosh, Greg Sun, Timothy A Morgan, et al.
Applied Optics|January 7, 2017
Ge<sub>0.975</sub>Sn<sub>0.025</sub> 320  ×  256 imager chip for 1.6-1.9  μm infrared visionChiao Chang, Hui Li, Chien-Te Ku, et al.
Nanoscale|March 31, 2023
Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responsesYeh-Chen Tai, Shu An, Po-Rei Huang, et al.
Materials (Basel, Switzerland)|February 15, 2022
Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power DensityChiao Chang, Hung-Hsiang Cheng, Gary A Sevison, et al.
ACS Applied Materials & Interfaces|August 25, 2025
Uncooled Ultraviolet to Mid-infrared Multifunctional Photodetectors Based on Monolayer Graphene on Pb[(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.7</sub>Ti<sub>0.3</sub>]O<sub>3</sub> SubstrateYujing Fan, Mohamed Abid, Mohamed Zerara, et al.
ACS Applied Materials & Interfaces|December 20, 2021
Efficient Suppression of Charge Recombination in Self-Powered Photodetectors with Band-Aligned Transferred van der Waals Metal ElectrodesGang Wu, Hee-Suk Chung, Tae-Sung Bae, et al.
ACS Applied Materials & Interfaces|March 6, 2020
Electrical Contact Barriers between a Three-Dimensional Metal and Layered SnS<sub>2</sub>Chengzhai Lv, Wenjie Yan, Tung-Ho Shieh, et al.
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