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Hyo-Bae Kim

Showing results (1-10 of 6) with videos related to

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Nanoscale|April 28, 2021
Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited <i>via</i> atomic layer deposition using cyclopentadienyl-based precursors without annealingHyo-Bae Kim, Moonyoung Jung, Youkyoung Oh, et al.
Nanomaterials (Basel, Switzerland)|August 12, 2023
Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> Thin Films via Atomic Layer DepositionYoukyoung Oh, Seung Won Lee, Jeong-Hun Choi, et al.
Nanomaterials (Basel, Switzerland)|October 14, 2023
Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System ApplicationsJisu Byun, Wonwoo Kho, Hyunjoo Hwang, et al.
ACS Nano|May 2, 2025
High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS<sub>2</sub>Moonyoung Jung, Hyo-Bae Kim, Yungyeong Park, et al.
Scientific Reports|July 2, 2025
Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumpingJaeHyeong Park, Hyo-Bae Kim, Sang Min Yu, et al.
Nanoscale|August 19, 2024
First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 sTae Hyeon Noh, Simin Chen, Hyo-Bae Kim, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Nanoscale|April 28, 2021
Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited <i>via</i> atomic layer deposition using cyclopentadienyl-based precursors without annealingHyo-Bae Kim, Moonyoung Jung, Youkyoung Oh, et al.
Nanomaterials (Basel, Switzerland)|August 12, 2023
Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> Thin Films via Atomic Layer DepositionYoukyoung Oh, Seung Won Lee, Jeong-Hun Choi, et al.
Nanomaterials (Basel, Switzerland)|October 14, 2023
Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System ApplicationsJisu Byun, Wonwoo Kho, Hyunjoo Hwang, et al.
ACS Nano|May 2, 2025
High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS<sub>2</sub>Moonyoung Jung, Hyo-Bae Kim, Yungyeong Park, et al.
Scientific Reports|July 2, 2025
Enhancing InGaZnO transistor current through high-κ dielectrics and interface trap extraction using single-pulse charge pumpingJaeHyeong Park, Hyo-Bae Kim, Sang Min Yu, et al.
Nanoscale|August 19, 2024
First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 sTae Hyeon Noh, Simin Chen, Hyo-Bae Kim, et al.
Pageof 1