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Micromachines|May 27, 2023
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility TransistorsMyeongsu Chae, Hyungtak KimMicromachines|November 14, 2019
Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect TransistorsDongmin Keum, Hyungtak KimMaterials (Basel, Switzerland)|December 5, 2019
Influence of Oxygen-Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate InsulatorGeunho Cho, Ho-Young Cha, Hyungtak KimMicromachines|April 30, 2021
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias ModulationVan Cuong Nguyen, Kwangeun Kim, Hyungtak KimMicromachines|June 2, 2021
Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High TemperatureTuan-Anh Vuong, Ho-Young Cha, Hyungtak KimSensors (Basel, Switzerland)|April 13, 2023
High Selectivity Hydrogen Gas Sensor Based on WO3/Pd-AlGaN/GaN HEMTsVan Cuong Nguyen, Ho-Young Cha, Hyungtak KimMaterials (Basel, Switzerland)|March 25, 2022
Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 FilmsChan-Hee Jang, Hyun-Seop Kim, Hyungtak Kim, et al.Journal of Nanoscience and Nanotechnology|January 24, 2020
High-Sensitivity Hydrogen Sensor Based on AlGaN/GaN Heterojunction Field-Effect TransistorJune-Heang Choi, Tuan Anh Vuong, Hyungtak Kim, et al.Sensors (Basel, Switzerland)|January 1, 2020
Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias ConditionsJune-Heang Choi, Hyungtak Kim, Hyuk-Kee Sung, et al.Optics Express|May 3, 2018
Enhanced UV absorption of GaN photodiodes with a ZnO quantum dot coating layerJong-Ik Kang, Hyungtak Kim, Chang-Yeol Han, et al.Pageof 2