Showing results (1-10 of 6) with videos related to
Sort By:
Pageof 1
Scientific Reports|August 17, 2017
Microsecond Pulse I-V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor TransistorHyunsuk Woo, Sanghun JeonACS Applied Materials & Interfaces|February 15, 2018
Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 InterfaceHyunsuk Woo, Sujaya Kumar Vishwanath, Sanghun JeonNanotechnology|April 10, 2018
Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switchingSujaya Kumar Vishwanath, Hyunsuk Woo, Sanghun JeonNanotechnology|June 19, 2018
Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memorySujaya Kumar Vishwanath, Hyunsuk Woo, Sanghun JeonNanotechnology|March 31, 2017
Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I-V methodHyunsuk Woo, Taeho Kim, Jihyun Hur, et al.ACS Applied Materials & Interfaces|August 5, 2017
Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating VoltageDong-Ho Kang, Woo-Young Choi, Hyunsuk Woo, et al.Pageof 1