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Igor Stolichnov

Showing results (11-20 of 16) with videos related to

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ACS Applied Materials & Interfaces|August 15, 2018
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf <sub>x</sub>Zr<sub>(1- x)</sub>O<sub>2</sub> Ultrathin CapacitorsIgor Stolichnov, Matteo Cavalieri, Enrico Colla, et al.
Nanotechnology|January 27, 2018
Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performanceAli Saeidi, Farzan Jazaeri, Igor Stolichnov, et al.
ACS Nano|February 13, 2025
Position-Sensitive Domain-by-Domain Switchable Ferroelectric MemristorFelix Risch, Panagiotis Koutsogiannis, Yuri Tikhonov, et al.
Nature Communications|August 15, 2014
Controlled stripes of ultrafine ferroelectric domainsLudwig Feigl, Petr Yudin, Igor Stolichnov, et al.
Scientific Reports|October 29, 2017
Van der Waals MoS<sub>2</sub>/VO<sub>2</sub> heterostructure junction with tunable rectifier behavior and efficient photoresponseNicoló Oliva, Emanuele Andrea Casu, Chen Yan, et al.
Nano Letters|November 12, 2015
Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like ChannelsIgor Stolichnov, Ludwig Feigl, Leo J McGilly, et al.
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Showing results (11-20 of 16) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 16 results.
ACS Applied Materials & Interfaces|August 15, 2018
Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in Hf <sub>x</sub>Zr<sub>(1- x)</sub>O<sub>2</sub> Ultrathin CapacitorsIgor Stolichnov, Matteo Cavalieri, Enrico Colla, et al.
Nanotechnology|January 27, 2018
Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performanceAli Saeidi, Farzan Jazaeri, Igor Stolichnov, et al.
ACS Nano|February 13, 2025
Position-Sensitive Domain-by-Domain Switchable Ferroelectric MemristorFelix Risch, Panagiotis Koutsogiannis, Yuri Tikhonov, et al.
Nature Communications|August 15, 2014
Controlled stripes of ultrafine ferroelectric domainsLudwig Feigl, Petr Yudin, Igor Stolichnov, et al.
Scientific Reports|October 29, 2017
Van der Waals MoS<sub>2</sub>/VO<sub>2</sub> heterostructure junction with tunable rectifier behavior and efficient photoresponseNicoló Oliva, Emanuele Andrea Casu, Chen Yan, et al.
Nano Letters|November 12, 2015
Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like ChannelsIgor Stolichnov, Ludwig Feigl, Leo J McGilly, et al.
Pageof 2