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Ilia Valov

Showing results (11-20 of 61) with videos related to

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Physical Chemistry Chemical Physics : PCCP|April 4, 2013
Switching kinetics of electrochemical metallization memory cellsStephan Menzel, Stefan Tappertzhofen, Rainer Waser, et al.
Nanoscale|January 29, 2013
Bond nature of active metal ions in SiO2-based electrochemical metallization memory cellsDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
Scientific Reports|February 5, 2013
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memoriesDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
RSC Advances|May 13, 2022
Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalitiesNiloufar Raeis-Hosseini, Shaochuan Chen, Christos Papavassiliou, et al.
Nanotechnology|May 17, 2011
Electrochemical metallization memories--fundamentals, applications, prospectsIlia Valov, Rainer Waser, John R Jameson, et al.
ACS Applied Materials & Interfaces|November 17, 2022
Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive DevicesGianluca Milano, Enrique Miranda, Matteo Fretto, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 18, 2023
Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and ChallengesShaochuan Chen, Teng Zhang, Stefan Tappertzhofen, et al.
Scientific Reports|October 5, 2013
Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architecturesJan van den Hurk, Viktor Havel, Eike Linn, et al.
Nanotechnology|October 1, 2014
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switchesJan van den Hurk, Eike Linn, Hehe Zhang, et al.
Nature Communications|March 8, 2025
Electrochemical ohmic memristors for continual learningShaochuan Chen, Zhen Yang, Heinrich Hartmann, et al.
Pageof 7

Showing results (11-20 of 61) with videos related to

Sort By:
Pageof 7
Physical Chemistry Chemical Physics : PCCP|April 4, 2013
Switching kinetics of electrochemical metallization memory cellsStephan Menzel, Stefan Tappertzhofen, Rainer Waser, et al.
Nanoscale|January 29, 2013
Bond nature of active metal ions in SiO2-based electrochemical metallization memory cellsDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
Scientific Reports|February 5, 2013
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memoriesDeok-Yong Cho, Stefan Tappertzhofen, Rainer Waser, et al.
RSC Advances|May 13, 2022
Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalitiesNiloufar Raeis-Hosseini, Shaochuan Chen, Christos Papavassiliou, et al.
Nanotechnology|May 17, 2011
Electrochemical metallization memories--fundamentals, applications, prospectsIlia Valov, Rainer Waser, John R Jameson, et al.
ACS Applied Materials & Interfaces|November 17, 2022
Experimental and Modeling Study of Metal-Insulator Interfaces to Control the Electronic Transport in Single Nanowire Memristive DevicesGianluca Milano, Enrique Miranda, Matteo Fretto, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 18, 2023
Electrochemical-Memristor-Based Artificial Neurons and Synapses-Fundamentals, Applications, and ChallengesShaochuan Chen, Teng Zhang, Stefan Tappertzhofen, et al.
Scientific Reports|October 5, 2013
Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architecturesJan van den Hurk, Viktor Havel, Eike Linn, et al.
Nanotechnology|October 1, 2014
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switchesJan van den Hurk, Eike Linn, Hehe Zhang, et al.
Nature Communications|March 8, 2025
Electrochemical ohmic memristors for continual learningShaochuan Chen, Zhen Yang, Heinrich Hartmann, et al.
Pageof 7