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Materials (Basel, Switzerland)
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December 10, 2021
Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry
Dario Schiavon, Robert Mroczyński, Anna Kafar, et al.
Materials (Basel, Switzerland)
|
October 14, 2023
Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
Iryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Materials (Basel, Switzerland)
|
September 28, 2024
Pros and Cons of (NH<sub>4</sub>)<sub>2</sub>S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode
Iryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
ACS Applied Electronic Materials
|
June 16, 2025
Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDs
Mikołaj Chlipała, Konstantinos Akritidis, Iryna Levchenko, et al.
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of 1
Search research articles
Search
Showing results (1-10 of 4) with videos related to
Sort By:
Page
of 1
Materials (Basel, Switzerland)
|
December 10, 2021
Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry
Dario Schiavon, Robert Mroczyński, Anna Kafar, et al.
Materials (Basel, Switzerland)
|
October 14, 2023
Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes
Iryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
Materials (Basel, Switzerland)
|
September 28, 2024
Pros and Cons of (NH<sub>4</sub>)<sub>2</sub>S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode
Iryna Levchenko, Serhii Kryvyi, Eliana Kamińska, et al.
ACS Applied Electronic Materials
|
June 16, 2025
Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDs
Mikołaj Chlipała, Konstantinos Akritidis, Iryna Levchenko, et al.
Page
of 1