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Nanoscale Research Letters|October 10, 2014
Coexistence of memory resistance and memory capacitance in TiO2 solid-state devicesIulia Salaoru, Qingjiang Li, Ali Khiat, et al.
Nanoscale Research Letters|July 5, 2014
Stochastic switching of TiO2-based memristive devices with identical initial memory statesQingjiang Li, Ali Khiat, Iulia Salaoru, et al.
Scientific Reports|April 1, 2014
Memory impedance in TiO2 based metal-insulator-metal devicesLi Qingjiang, Ali Khiat, Iulia Salaoru, et al.
ACS Applied Materials & Interfaces|July 14, 2016
Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX ApproachDaniela Carta, Iulia Salaoru, Ali Khiat, et al.
Scientific Reports|September 3, 2016
High Density Crossbar Arrays with Sub- 15 nm Single Cells via Liftoff Process OnlyAli Khiat, Peter Ayliffe, Themistoklis Prodromakis
Nature Communications|June 6, 2018
Seamlessly fused digital-analogue reconfigurable computing using memristorsAlexantrou Serb, Ali Khiat, Themistoklis Prodromakis
Nanotechnology|December 8, 2016
Resistive switching of Pt/TiO x /Pt devices fabricated on flexible Parylene-C substratesAli Khiat, Simone Cortese, Alexander Serb, et al.
Faraday Discussions|December 20, 2018
Spike sorting using non-volatile metal-oxide memristorsIsha Gupta, Alexantrou Serb, Ali Khiat, et al.
Plos One|March 19, 2015
A memristor SPICE model accounting for synaptic activity dependenceQingjiang Li, Alexander Serb, Themistoklis Prodromakis, et al.
Scientific Reports|January 5, 2016
Emulating short-term synaptic dynamics with memristive devicesRadu Berdan, Eleni Vasilaki, Ali Khiat, et al.
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