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Ivan G Ivanov

Showing results (11-20 of 26) with videos related to

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Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 15, 2019
Ligand hyperfine interactions at silicon vacancies in 4H-SiCNguyen Tien Son, Pontus Stenberg, Valdas Jokubavicius, et al.
Journal of Microbiology (Seoul, Korea)|September 19, 2009
Identification and characterization of acetyl-CoA carboxylase gene cluster in Streptomyces toxytriciniAtanas V Demirev, Ji Seon Lee, Bhishma R Sedai, et al.
Nanophotonics (Berlin, Germany)|December 5, 2024
Exhaustive characterization of modified Si vacancies in 4H-SiCJoel Davidsson, Rohit Babar, Danial Shafizadeh, et al.
Journal of the American Chemical Society|April 17, 2025
Manipulating Electron Structure through Dual-Interface Engineering of 3C-SiC Photoanode for Enhanced Solar Water SplittingHui Zeng, Satoru Yoshioka, Weimin Wang, et al.
Nanomaterials (Basel, Switzerland)|July 9, 2022
Understanding of the Electrochemical Behavior of Lithium at Bilayer-Patched Epitaxial Graphene/4H-SiCIvan Shtepliuk, Mikhail Vagin, Ziyauddin Khan, et al.
ACS Applied Materials & Interfaces|September 17, 2024
Aging Ni(OH)<sub>2</sub> on 3C-SiC Photoanodes to Achieve a High Photovoltage of 1.1 V and Enhanced Stability for Solar Water Splitting in Strongly Alkaline SolutionsYuanju Qu, Valdas Jokubavicius, Duc Quang Hoang, et al.
Materials (Basel, Switzerland)|October 27, 2018
Understanding Graphene Response to Neutral and Charged Lead Species: Theory and ExperimentIvan Shtepliuk, Maria Francesca Santangelo, Mikhail Vagin, et al.
Zeitschrift Fur Naturforschung. C, Journal of Biosciences|January 13, 2016
Alkaloid profiles and acetylcholinesterase inhibitory activities of Fumaria species from BulgariaRadka Z Vrancheva, Ivan G Ivanov, Ina Y Aneva, et al.
Dalton Transactions (Cambridge, England : 2003)|June 14, 2024
On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCSachin Sharma, Laurent Souqui, Justinas Palisaitis, et al.
Nanoscale|September 22, 2020
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interfaceAnelia Kakanakova-Georgieva, Gueorgui K Gueorguiev, Davide G Sangiovanni, et al.
Pageof 3

Showing results (11-20 of 26) with videos related to

Sort By:
Pageof 3
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 15, 2019
Ligand hyperfine interactions at silicon vacancies in 4H-SiCNguyen Tien Son, Pontus Stenberg, Valdas Jokubavicius, et al.
Journal of Microbiology (Seoul, Korea)|September 19, 2009
Identification and characterization of acetyl-CoA carboxylase gene cluster in Streptomyces toxytriciniAtanas V Demirev, Ji Seon Lee, Bhishma R Sedai, et al.
Nanophotonics (Berlin, Germany)|December 5, 2024
Exhaustive characterization of modified Si vacancies in 4H-SiCJoel Davidsson, Rohit Babar, Danial Shafizadeh, et al.
Journal of the American Chemical Society|April 17, 2025
Manipulating Electron Structure through Dual-Interface Engineering of 3C-SiC Photoanode for Enhanced Solar Water SplittingHui Zeng, Satoru Yoshioka, Weimin Wang, et al.
Nanomaterials (Basel, Switzerland)|July 9, 2022
Understanding of the Electrochemical Behavior of Lithium at Bilayer-Patched Epitaxial Graphene/4H-SiCIvan Shtepliuk, Mikhail Vagin, Ziyauddin Khan, et al.
ACS Applied Materials & Interfaces|September 17, 2024
Aging Ni(OH)<sub>2</sub> on 3C-SiC Photoanodes to Achieve a High Photovoltage of 1.1 V and Enhanced Stability for Solar Water Splitting in Strongly Alkaline SolutionsYuanju Qu, Valdas Jokubavicius, Duc Quang Hoang, et al.
Materials (Basel, Switzerland)|October 27, 2018
Understanding Graphene Response to Neutral and Charged Lead Species: Theory and ExperimentIvan Shtepliuk, Maria Francesca Santangelo, Mikhail Vagin, et al.
Zeitschrift Fur Naturforschung. C, Journal of Biosciences|January 13, 2016
Alkaloid profiles and acetylcholinesterase inhibitory activities of Fumaria species from BulgariaRadka Z Vrancheva, Ivan G Ivanov, Ina Y Aneva, et al.
Dalton Transactions (Cambridge, England : 2003)|June 14, 2024
On the origin of epitaxial rhombohedral-B<sub>4</sub>C growth by CVD on 4H-SiCSachin Sharma, Laurent Souqui, Justinas Palisaitis, et al.
Nanoscale|September 22, 2020
Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interfaceAnelia Kakanakova-Georgieva, Gueorgui K Gueorguiev, Davide G Sangiovanni, et al.
Pageof 3