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Scientific Reports|June 11, 2014
Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobilityJ A Caraveo-Frescas, M A Khan, H N AlshareefScientific Reports|April 15, 2014
Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layerPradipta K Nayak, J A Caraveo-Frescas, Zhenwei Wang, et al.Scientific Reports|April 21, 2015
Low temperature processed complementary metal oxide semiconductor (CMOS) device by oxidation effect from capping layerZhenwei Wang, Hala A Al-Jawhari, Pradipta K Nayak, et al.Pageof 1