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Journal of Nanoscience and Nanotechnology|December 8, 2010
Nanofabrication of 30 nm devices incorporating low resistance magnetic tunnel junctionsR Macedo, J Borme, R Ferreira, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|February 3, 2016
Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mmN C S Vieira, J Borme, G Machado, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 7, 2018
Experimental and theoretical evidences for the ice regime in planar artificial spin icesR P Loreto, F S Nascimento, R S Gonçalves, et al.
Scientific Reports|June 21, 2020
Effects of magnetic monopoles charge on the cracking reversal processes in artificial square icesT S de Paiva, J H Rodrigues, L A S Mól, et al.
Nanoscale|November 29, 2021
Room temperature two terminal tunnel magnetoresistance in a lateral graphene transistorC I L de Araujo, H A Teixeira, O O Toro, et al.
Scientific Reports|October 27, 2017
Realization of Rectangular Artificial Spin Ice and Direct Observation of High Energy TopologyI R B Ribeiro, F S Nascimento, S O Ferreira, et al.
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