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J Joshua Yang

Showing results (31-40 of 84) with videos related to

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Nanoscale|May 25, 2016
Correction: Electrochemical metallization switching with a platinum group metal in different oxidesZhongrui Wang, Hao Jiang, Moon Hyung Jang, et al.
ACS Nano|October 3, 2024
Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory ArraySeung Ju Kim, In Hyuk Im, Ji Hyun Baek, et al.
Nanotechnology|May 9, 2009
The mechanism of electroforming of metal oxide memristive switchesJ Joshua Yang, Feng Miao, Matthew D Pickett, et al.
Materials Horizons|August 27, 2024
Leveraging volatile memristors in neuromorphic computing: from materials to system implementationTaehwan Moon, Keunho Soh, Jong Sung Kim, et al.
Data in Brief|October 13, 2018
Data related to the nanoscale structural and compositional evolution in resistance change memoriesTaimur Ahmed, Sumeet Walia, Edwin L H Mayes, et al.
Nano Letters|September 24, 2016
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar ApplicationKyung Min Kim, Jiaming Zhang, Catherine Graves, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 1, 2010
Direct identification of the conducting channels in a functioning memristive deviceJohn Paul Strachan, Matthew D Pickett, J Joshua Yang, et al.
Scientific Reports|February 3, 2016
Voltage divider effect for the improvement of variability and endurance of TaO(x) memristorKyung Min Kim, J Joshua Yang, John Paul Strachan, et al.
Journal of the American Chemical Society|March 6, 2008
Oxide and carbide formation at titanium/organic monolayer interfacesJason J Blackstock, Carrie L Donley, William F Stickle, et al.
ACS Nano|February 13, 2024
High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant IncorporationByeong Min Lim, Yu Min Lee, Chan Sik Yoo, et al.
Pageof 9

Showing results (31-40 of 84) with videos related to

Sort By:
Pageof 9
Nanoscale|May 25, 2016
Correction: Electrochemical metallization switching with a platinum group metal in different oxidesZhongrui Wang, Hao Jiang, Moon Hyung Jang, et al.
ACS Nano|October 3, 2024
Reliable and Robust Two-Dimensional Perovskite Memristors for Flexible-Resistive Random-Access Memory ArraySeung Ju Kim, In Hyuk Im, Ji Hyun Baek, et al.
Nanotechnology|May 9, 2009
The mechanism of electroforming of metal oxide memristive switchesJ Joshua Yang, Feng Miao, Matthew D Pickett, et al.
Materials Horizons|August 27, 2024
Leveraging volatile memristors in neuromorphic computing: from materials to system implementationTaehwan Moon, Keunho Soh, Jong Sung Kim, et al.
Data in Brief|October 13, 2018
Data related to the nanoscale structural and compositional evolution in resistance change memoriesTaimur Ahmed, Sumeet Walia, Edwin L H Mayes, et al.
Nano Letters|September 24, 2016
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar ApplicationKyung Min Kim, Jiaming Zhang, Catherine Graves, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 1, 2010
Direct identification of the conducting channels in a functioning memristive deviceJohn Paul Strachan, Matthew D Pickett, J Joshua Yang, et al.
Scientific Reports|February 3, 2016
Voltage divider effect for the improvement of variability and endurance of TaO(x) memristorKyung Min Kim, J Joshua Yang, John Paul Strachan, et al.
Journal of the American Chemical Society|March 6, 2008
Oxide and carbide formation at titanium/organic monolayer interfacesJason J Blackstock, Carrie L Donley, William F Stickle, et al.
ACS Nano|February 13, 2024
High-Reliability and Self-Rectifying Alkali Ion Memristor through Bottom Electrode Design and Dopant IncorporationByeong Min Lim, Yu Min Lee, Chan Sik Yoo, et al.
Pageof 9