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J P Goss

Showing results (11-20 of 16) with videos related to

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Journal of Nanoscience and Nanotechnology|February 21, 2013
Ab initio studies of fluorine passivation on the electronic structure of the NV- defect in nanodiamondH Pinto, D W Palmer, R Jones, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|January 15, 2013
Hyperfine interactions at nitrogen interstitial defects in diamondM K Atumi, J P Goss, P R Briddon, et al.
Physical Review Letters|November 13, 2007
Self-interstitial in germaniumA Carvalho, R Jones, C Janke, et al.
Physical Chemistry Chemical Physics : PCCP|July 20, 2016
Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dotsMarzaini Rashid, Amit K Tiwari, J P Goss, et al.
Physical Review Letters|October 4, 2005
Importance of quantum tunneling in vacancy-hydrogen complexes in diamondM J Shaw, P R Briddon, J P Goss, et al.
Physical Review Letters|August 29, 2014
Extended point defects in crystalline materials: Ge and SiN E B Cowern, S Simdyankin, C Ahn, et al.
Pageof 2

Showing results (11-20 of 16) with videos related to

Sort By:
Pageof 2
You have reached the last page of results.This site can display upto 16 results.
Journal of Nanoscience and Nanotechnology|February 21, 2013
Ab initio studies of fluorine passivation on the electronic structure of the NV- defect in nanodiamondH Pinto, D W Palmer, R Jones, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|January 15, 2013
Hyperfine interactions at nitrogen interstitial defects in diamondM K Atumi, J P Goss, P R Briddon, et al.
Physical Review Letters|November 13, 2007
Self-interstitial in germaniumA Carvalho, R Jones, C Janke, et al.
Physical Chemistry Chemical Physics : PCCP|July 20, 2016
Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dotsMarzaini Rashid, Amit K Tiwari, J P Goss, et al.
Physical Review Letters|October 4, 2005
Importance of quantum tunneling in vacancy-hydrogen complexes in diamondM J Shaw, P R Briddon, J P Goss, et al.
Physical Review Letters|August 29, 2014
Extended point defects in crystalline materials: Ge and SiN E B Cowern, S Simdyankin, C Ahn, et al.
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