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Nanotechnology
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April 18, 2020
Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities
L Rickert, B Fritsch, A Kors, et al.
Nature Communications
|
September 23, 2014
Coherent control in a semiconductor optical amplifier operating at room temperature
A Capua, O Karni, G Eisenstein, et al.
Optics Express
|
July 19, 2020
Temperature resistant fast In<sub>x</sub>Ga<sub>1-x</sub>As / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers
T Finke, J Nürnberg, V Sichkovskyi, et al.
Optics Express
|
July 8, 2009
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier
A Capua, S O'Duill, V Mikhelashvili, et al.
Optics Express
|
November 3, 2017
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
O Eyal, A Willinger, S Banyoudeh, et al.
Physical Review Letters
|
May 21, 2005
Control of vertically coupled InGaAs/GaAs quantum dots with electric fields
G Ortner, M Bayer, Y Lyanda-Geller, et al.
Optics Express
|
June 11, 2008
Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm
A Capua, V Mikhelashvili, G Eisenstein, et al.
Optics Express
|
March 14, 2018
Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers
A Abdollahinia, S Banyoudeh, A Rippien, et al.
Nature
|
November 13, 2004
Strong coupling in a single quantum dot-semiconductor microcavity system
J P Reithmaier, G Sek, A Löffler, et al.
Optics Letters
|
May 12, 2006
Coherent photonic coupling of semiconductor quantum dots
S Reitzenstein, A Löffler, C Hofmann, et al.
Page
of 2
Search research articles
Search
Showing results (1-10 of 11) with videos related to
Sort By:
Page
of 2
Nanotechnology
|
April 18, 2020
Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities
L Rickert, B Fritsch, A Kors, et al.
Nature Communications
|
September 23, 2014
Coherent control in a semiconductor optical amplifier operating at room temperature
A Capua, O Karni, G Eisenstein, et al.
Optics Express
|
July 19, 2020
Temperature resistant fast In<sub>x</sub>Ga<sub>1-x</sub>As / GaAs quantum dot saturable absorber for the epitaxial integration into semiconductor surface emitting lasers
T Finke, J Nürnberg, V Sichkovskyi, et al.
Optics Express
|
July 8, 2009
Cross talk free multi channel processing of 10 Gbit/s data via four wave mixing in a 1550 nm InAs/InP quantum dash amplifier
A Capua, S O'Duill, V Mikhelashvili, et al.
Optics Express
|
November 3, 2017
Static and dynamic characteristics of an InAs/InP quantum-dot optical amplifier operating at high temperatures
O Eyal, A Willinger, S Banyoudeh, et al.
Physical Review Letters
|
May 21, 2005
Control of vertically coupled InGaAs/GaAs quantum dots with electric fields
G Ortner, M Bayer, Y Lyanda-Geller, et al.
Optics Express
|
June 11, 2008
Direct observation of the coherent spectral hole in the noise spectrum of a saturated InAs/InP quantum dash amplifier operating near 1550 nm
A Capua, V Mikhelashvili, G Eisenstein, et al.
Optics Express
|
March 14, 2018
Temperature stability of static and dynamic properties of 1.55 µm quantum dot lasers
A Abdollahinia, S Banyoudeh, A Rippien, et al.
Nature
|
November 13, 2004
Strong coupling in a single quantum dot-semiconductor microcavity system
J P Reithmaier, G Sek, A Löffler, et al.
Optics Letters
|
May 12, 2006
Coherent photonic coupling of semiconductor quantum dots
S Reitzenstein, A Löffler, C Hofmann, et al.
Page
of 2