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Scientific Reports|August 1, 2025
Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integrationTae Seong Kwon, Young Jun Yoon, Do Yeon Park, et al.
Journal of Nanoscience and Nanotechnology|January 5, 2016
Short-Channel Tunneling Field-Effect Transistor with Drain-Overlap and Dual-Metal Gate Structure for Low-Power and High-Speed OperationsYoung Jun Yoon, Hye Rim Eun, Jae Hwa Seo, et al.
Journal of Nanoscience and Nanotechnology|May 12, 2015
Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT)Jae Hwa Seo, Young Jun Yoon, Hwan Gi Lee, et al.
Nanomaterials (Basel, Switzerland)|October 14, 2022
Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped StructureHee Dae An, Sang Ho Lee, Jin Park, et al.
Materials (Basel, Switzerland)|February 15, 2022
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer InsulatorSo-Ra Min, Min-Su Cho, Sang-Ho Lee, et al.
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