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ACS Nano|January 7, 2026
Metal-Induced Oxygen Vacancy Control in InGaZnO/Hf0.5Zr0.5O2 Ferroelectric Field-Effect Transistor Arrays for Simultaneous Improvement of Memory Window and Electrical StabilityJae Seong Han, Kyungmoon Kwak, Subi Choi, et al.
ACS Applied Materials & Interfaces|July 17, 2026
Interlayer-Free Ferroelectric Transistors via Depletion Charge Boosting in Oxide Channel for Neuromorphic ApplicationsJae Seong Han, Subi Choi, Seok Gyu Hong, et al.
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