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Jang Hyeok Park

Showing results (1-10 of 5) with videos related to

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ACS Nano|February 26, 2025
Transferred Graphene Monolayer to β-Ga<sub>2</sub>O<sub>3</sub> as a Diffusion Barrier for Based Power Device ApplicationsMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|February 9, 2024
Ultrahigh Photoresponsivity of W/Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Deep Ultraviolet PhotodiodesMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|October 22, 2024
2D Embedded Ultrawide Bandgap Devices for Extreme Environment ApplicationsMadani Labed, Ji-Yun Moon, Seung-Il Kim, et al.
ACS Nano|December 31, 2025
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga<sub>2</sub>O<sub>3</sub>Madani Labed, Kanghee Shin, Mohammad Tauquir A S Shaikh, et al.
ACS Applied Materials & Interfaces|July 8, 2025
Electrical Performance and Deep-Level Trap Characterization of p-CuGaO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunctions for Power ElectronicsChowdam Venkata Prasad, Geon-Hee Lee, Jang Hyeok Park, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
ACS Nano|February 26, 2025
Transferred Graphene Monolayer to β-Ga<sub>2</sub>O<sub>3</sub> as a Diffusion Barrier for Based Power Device ApplicationsMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|February 9, 2024
Ultrahigh Photoresponsivity of W/Graphene/β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Deep Ultraviolet PhotodiodesMadani Labed, Bo-In Park, Jekyung Kim, et al.
ACS Nano|October 22, 2024
2D Embedded Ultrawide Bandgap Devices for Extreme Environment ApplicationsMadani Labed, Ji-Yun Moon, Seung-Il Kim, et al.
ACS Nano|December 31, 2025
Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga<sub>2</sub>O<sub>3</sub>Madani Labed, Kanghee Shin, Mohammad Tauquir A S Shaikh, et al.
ACS Applied Materials & Interfaces|July 8, 2025
Electrical Performance and Deep-Level Trap Characterization of p-CuGaO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunctions for Power ElectronicsChowdam Venkata Prasad, Geon-Hee Lee, Jang Hyeok Park, et al.
Pageof 1