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Jaros

Showing results (51-60 of 742) with videos related to

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Physical Review. B, Condensed Matter|December 15, 1995
Interface-induced localization in AlSb/InAs heterostructuresShaw, Briddon, Jaros
Physical Review. B, Condensed Matter|July 15, 1996
Electronic structure of InAs/GaAs self-assembled quantum dotsCusack, Briddon, Jaros
Physical Review. B, Condensed Matter|September 15, 1989
Splitting of the states derived from the bulk X minima in GaAs-AlAs superlatticesBrown, Jaros, Wolford
Physical Review. B, Condensed Matter|September 15, 1989
Effect of band structure on Stark shifts in GaAs quantum wellsHagon, Jaros, Herbert
Physical Review. B, Condensed Matter|October 15, 1988
Electronic band structure and nonparabolicity in strained-layer Si-Si1-xGex superlatticesTurton, Jaros, Morrison
Physical Review. B, Condensed Matter|June 15, 1994
Role of localization in determining second-order optical nonlinearities in p-type GaAs-AlAs asymmetric quantum wellsCusack, Shaw, Jaros
Physical Review. B, Condensed Matter|July 15, 1993
Microscopic origin of optical nonlinearities associated with excitations between valence minibands in p-type GaAs-AlAs and Si-Si1-xGex heterostructuresShaw, Wong, Jaros
Physical Review. B, Condensed Matter|January 15, 1985
Electronic structure of GaAs-Ga1-xAlxAs quantum well and sawtooth superlatticesJaros, Wong, Gell
Physical Review. B, Condensed Matter|December 15, 1996
Electronic structure of imperfect Si/Ge heterostructuresShaw, Briddon, Jaros
Physical Review. B, Condensed Matter|July 15, 1989
Large intersubband infrared transitions in GaAs-Ga1-xAlxAs superlatticesBrown, Jaros, Herbert
Pageof 75

Showing results (51-60 of 742) with videos related to

Sort By:
Pageof 75
Physical Review. B, Condensed Matter|December 15, 1995
Interface-induced localization in AlSb/InAs heterostructuresShaw, Briddon, Jaros
Physical Review. B, Condensed Matter|July 15, 1996
Electronic structure of InAs/GaAs self-assembled quantum dotsCusack, Briddon, Jaros
Physical Review. B, Condensed Matter|September 15, 1989
Splitting of the states derived from the bulk X minima in GaAs-AlAs superlatticesBrown, Jaros, Wolford
Physical Review. B, Condensed Matter|September 15, 1989
Effect of band structure on Stark shifts in GaAs quantum wellsHagon, Jaros, Herbert
Physical Review. B, Condensed Matter|October 15, 1988
Electronic band structure and nonparabolicity in strained-layer Si-Si1-xGex superlatticesTurton, Jaros, Morrison
Physical Review. B, Condensed Matter|June 15, 1994
Role of localization in determining second-order optical nonlinearities in p-type GaAs-AlAs asymmetric quantum wellsCusack, Shaw, Jaros
Physical Review. B, Condensed Matter|July 15, 1993
Microscopic origin of optical nonlinearities associated with excitations between valence minibands in p-type GaAs-AlAs and Si-Si1-xGex heterostructuresShaw, Wong, Jaros
Physical Review. B, Condensed Matter|January 15, 1985
Electronic structure of GaAs-Ga1-xAlxAs quantum well and sawtooth superlatticesJaros, Wong, Gell
Physical Review. B, Condensed Matter|December 15, 1996
Electronic structure of imperfect Si/Ge heterostructuresShaw, Briddon, Jaros
Physical Review. B, Condensed Matter|July 15, 1989
Large intersubband infrared transitions in GaAs-Ga1-xAlxAs superlatticesBrown, Jaros, Herbert
Pageof 75