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Jen-Inn Chyi

Showing results (1-10 of 22) with videos related to

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Materials (Basel, Switzerland)|January 11, 2022
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel ArrayHsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi, et al.
Optics Express|January 22, 2015
Quantum control study of ultrafast optical responses in semiconductor quantum dot devicesJung Y Huang, Chien Y Lin, Wei-Sheng Liu, et al.
Nanoscale Research Letters|September 27, 2014
Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETsWen-Chia Liao, Yan-Lun Chen, Zheng-Xing Chen, et al.
Materials (Basel, Switzerland)|October 13, 2021
Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel ArrayHsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, et al.
Physical Review Letters|April 12, 2006
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavitiesWen-Hao Chang, Wen-Yen Chen, Hsiang-Szu Chang, et al.
Nanotechnology|July 6, 2010
Site-controlled self-assembled InAs quantum dots grown on GaAs substratesShih-Yen Lin, Chi-Che Tseng, Tung-Hsun Chung, et al.
Nanotechnology|August 6, 2011
High extractive single-photon emissions from InGaAs quantum dots on a GaAs pyramid-like multifaceted structureHsiang-Szu Chang, Chieh-Ming Hsu, Wen-Yen Chen, et al.
Ultrasonics|August 30, 2011
Broadband terahertz ultrasonic transducer based on a laser-driven piezoelectric semiconductor superlatticeA A Maznev, Kara J Manke, Kung-Hsuan Lin, et al.
Scientific Reports|May 31, 2018
High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivityYi-Ting Chen, Indu Sarangadharan, Revathi Sukesan, et al.
Lab on a Chip|March 1, 2018
Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensorAnil Kumar Pulikkathodi, Indu Sarangadharan, Yi-Hong Chen, et al.
Pageof 3

Showing results (1-10 of 22) with videos related to

Sort By:
Pageof 3
Materials (Basel, Switzerland)|January 11, 2022
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel ArrayHsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi, et al.
Optics Express|January 22, 2015
Quantum control study of ultrafast optical responses in semiconductor quantum dot devicesJung Y Huang, Chien Y Lin, Wei-Sheng Liu, et al.
Nanoscale Research Letters|September 27, 2014
Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETsWen-Chia Liao, Yan-Lun Chen, Zheng-Xing Chen, et al.
Materials (Basel, Switzerland)|October 13, 2021
Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel ArrayHsin-Ying Lee, Day-Shan Liu, Jen-Inn Chyi, et al.
Physical Review Letters|April 12, 2006
Efficient single-photon sources based on low-density quantum dots in photonic-crystal nanocavitiesWen-Hao Chang, Wen-Yen Chen, Hsiang-Szu Chang, et al.
Nanotechnology|July 6, 2010
Site-controlled self-assembled InAs quantum dots grown on GaAs substratesShih-Yen Lin, Chi-Che Tseng, Tung-Hsun Chung, et al.
Nanotechnology|August 6, 2011
High extractive single-photon emissions from InGaAs quantum dots on a GaAs pyramid-like multifaceted structureHsiang-Szu Chang, Chieh-Ming Hsu, Wen-Yen Chen, et al.
Ultrasonics|August 30, 2011
Broadband terahertz ultrasonic transducer based on a laser-driven piezoelectric semiconductor superlatticeA A Maznev, Kara J Manke, Kung-Hsuan Lin, et al.
Scientific Reports|May 31, 2018
High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivityYi-Ting Chen, Indu Sarangadharan, Revathi Sukesan, et al.
Lab on a Chip|March 1, 2018
Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensorAnil Kumar Pulikkathodi, Indu Sarangadharan, Yi-Hong Chen, et al.
Pageof 3