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ACS Applied Materials & Interfaces|June 20, 2015
Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substratesJennifer K Hite, Zachary R Robinson, Charles R Eddy, et al.
Ultramicroscopy|August 7, 2023
Methodology and implementation of a tunable deep-ultraviolet laser source for photoemission electron microscopyAndrew J Winchester, Travis J Anderson, Jennifer K Hite, et al.
Optics Express|November 13, 2015
Development of solar-blind photodetectors based on Si-implanted β-Ga(2)O(3)Sooyeoun Oh, Younghun Jung, Michael A Mastro, et al.
Optics Express|January 26, 2012
Nanostructured n-ZnO / thin film p-silicon heterojunction light-emitting diodesJaehui Ahn, Hyunik Park, Michael A Mastro, et al.
Physical Chemistry Chemical Physics : PCCP|June 28, 2014
Chemical etching behaviors of semipolar (11̄22) and nonpolar (11̄20) gallium nitride filmsYounghun Jung, Kwang Hyeon Baik, Michael A Mastro, et al.
Optics Express|November 24, 2011
Single n-GaN microwire/p-Silicon thin film heterojunction light-emitting diodeJaehui Ahn, Michael A Mastro, Paul B Klein, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|June 8, 2010
Photopolymerization of self-assembled monolayers of diacetylenic alkylphosphonic acids on group-III nitride substratesFeng Li, Evgeniy Shishkin, Michael A Mastro, et al.
Nanoscale|February 3, 2015
Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substratesBoris N Feigelson, Victor M Bermudez, Jennifer K Hite, et al.
Nano Letters|February 17, 2011
Epitaxial graphene nucleation on C-face silicon carbideJennifer K Hite, Mark E Twigg, Joseph L Tedesco, et al.
Optics Express|February 12, 2014
GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodesByung-Jae Kim, Gwangseok Yang, Hong-Yeol Kim, et al.
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