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Nanoscale|April 11, 2018
Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layerHyo-Min Kim, Jeonggi Kim, Jin JangACS Applied Materials & Interfaces|May 12, 2018
Low Work Function 2.81 eV Rb2CO3-Doped Polyethylenimine Ethoxylated for Inverted Organic Light-Emitting DiodesJeonggi Kim, Hyo-Min Kim, Jin JangACS Applied Materials & Interfaces|October 23, 2015
Inverted Quantum-Dot Light Emitting Diode Using Solution Processed p-Type WOx Doped PEDOT:PSS and Li Doped ZnO Charge Generation LayerHyo-Min Kim, Jeonggi Kim, Jieun Lee, et al.ACS Applied Materials & Interfaces|October 5, 2016
Metal-Oxide Stacked Electron Transport Layer for Highly Efficient Inverted Quantum-Dot Light Emitting DiodesHyo-Min Kim, Di Geng, Jeonggi Kim, et al.ACS Applied Materials & Interfaces|October 19, 2017
Solution-Processed Metal-Oxide p-n Charge Generation Junction for High-Performance Inverted Quantum-Dot Light-Emitting DiodesHyo-Min Kim, Jeonggi Kim, Sin-Young Cho, et al.ACS Applied Materials & Interfaces|June 29, 2018
Li and Mg Co-Doped Zinc Oxide Electron Transporting Layer for Highly Efficient Quantum Dot Light-Emitting DiodesHyo-Min Kim, Sinyoung Cho, Jeonggi Kim, et al.Nanoscale|October 11, 2016
Solution-processed nickel oxide nanoparticles with NiOOH for hole injection layers of high-efficiency organic light-emitting diodesJeonggi Kim, Hui Joon Park, Costas P Grigoropoulos, et al.Pageof 1