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ACS Applied Materials & Interfaces|June 22, 2023
Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive DeviceYang Chen, Zhiming Shi, Shanli Zhang, et al.
Optics Letters|February 14, 2025
Enhancing hole injection efficiency in an AlGaN-based deep ultraviolet laser diode by three-terminal structure with the AlScN ferroelectric layerRuihua Chen, Ke Jiang, Zi-Hui Zhang, et al.
Optics Letters|July 15, 2024
Highly reflective Ni/Pt/Al p-electrode for improving the efficiency of an AlGaN-based deep ultraviolet light-emitting diodeKexi Liu, Ke Jiang, Bingxiang Wang, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 29, 2021
2D III-Nitride Materials: Properties, Growth, and ApplicationsJianwei Ben, Xinke Liu, Cong Wang, et al.
Nanoscale Research Letters|June 1, 2019
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain FieldJianwei Ben, Xiaojuan Sun, Yuping Jia, et al.
Optics Letters|February 14, 2025
Self-powered radiation detector based on an AlScN/SiC heterojunction structureChong Chen, Yuping Jia, Xiaojuan Sun, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 26, 2025
Ultraviolet Optoelectronic Synapse Based on AlScN/p-i-n GaN Heterojunction for Advanced Artificial Vision SystemsZhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Nanoscale Advances|January 18, 2024
The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphireKe Jiang, Jianwei Ben, Xiaojuan Sun, et al.
Nano Letters|April 28, 2025
Discovery of a Structure Mediated by a Reconstructed Aluminum Atomic Layer at an AlN/Al2O3 InterfaceZhou Jiang, Zhaoji Huang, Qing Liang, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 12, 2025
Low-Field-Driven Domain Wall Motion in Wurtzite FerroelectricsMingrui Liu, Dan Li, Zhongran Liu, et al.
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