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Chemical Science|May 17, 2017
Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growthJichen Dong, Huan Wang, Hailin Peng, et al.
Angewandte Chemie (International Ed. in English)|November 19, 2024
Unconventional Near-Equilibrium Nucleation of Graphene on Si-Terminated SiC(0001) SurfaceHaojie Huang, Zebin Ren, Xiao Xue, et al.
Scientific Reports|October 6, 2015
Multilayer hexagonal silicon forming in slit nanoporeYezeng He, Hui Li, Yanwei Sui, et al.
ACS Nano|August 19, 2014
Precise determination of the threshold diameter for a single-walled carbon nanotube to collapseMaoshuai He, Jichen Dong, Kaili Zhang, et al.
Journal of Hazardous Materials|August 14, 2021
Studying the adsorption mechanisms of nanoplastics on covalent organic frameworks via molecular dynamics simulationsShengcong Shang, Youxing Liu, Minghui Liu, et al.
ACS Applied Materials & Interfaces|June 4, 2025
Orientation-Controlled van der Waals Epitaxy of MoSe<sub>2</sub> Monolayers on Graphene by MOCVDWei Lyu, Jing Liao, Yuyang Long, et al.
Physical Review Letters|June 30, 2018
What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition?Ding Yi, Da Luo, Zhu-Jun Wang, et al.
Journal of the American Chemical Society|December 21, 2016
Edge-Controlled Growth and Etching of Two-Dimensional GaSe MonolayersXufan Li, Jichen Dong, Juan C Idrobo, et al.
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