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The Journal of Chemical Physics|January 9, 2026
Ferroelectric domain relaxation enables reliable multi-bit storage in hafnia-based memristorsJio Shin, Chaewon Youn, Sungjun KimACS Applied Materials & Interfaces|April 1, 2025
Depolarization Field Controllable HfZrO-Based Ferroelectric Capacitors for Physical Reservoir Computing SystemEuncho Seo, Eunjin Lim, Jio Shin, et al.Pageof 1