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Jiwon Ma

Showing results (1-10 of 3) with videos related to

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Nano Letters|February 5, 2026
Large-Scale Dual-Channel WSe<sub>2</sub> Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable LogicEunyeong Yang, Jiwon Ma, Changwook Lee, et al.
Small (Weinheim an Der Bergstrasse, Germany)|September 3, 2025
Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS<sub>2</sub> Nanosheet Field-Effect Transistors for Area-Efficient Integrated CircuitJiwon Ma, Eunyeong Yang, Changwook Lee, et al.
ACS Nano|August 15, 2024
Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS<sub>2</sub> Transistor Operating in Subthreshold RegimeEunyeong Yang, Sekwon Hong, Jiwon Ma, et al.
Pageof 1

Showing results (1-10 of 3) with videos related to

Sort By:
Pageof 1
Nano Letters|February 5, 2026
Large-Scale Dual-Channel WSe<sub>2</sub> Reconfigurable Field-Effect Transistors with Charge-Trapping Layer for 2T TCAM and Reconfigurable LogicEunyeong Yang, Jiwon Ma, Changwook Lee, et al.
Small (Weinheim an Der Bergstrasse, Germany)|September 3, 2025
Large-Scale Implementation of Vertical Sidewall and Vertical Multi-Channel WS<sub>2</sub> Nanosheet Field-Effect Transistors for Area-Efficient Integrated CircuitJiwon Ma, Eunyeong Yang, Changwook Lee, et al.
ACS Nano|August 15, 2024
Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS<sub>2</sub> Transistor Operating in Subthreshold RegimeEunyeong Yang, Sekwon Hong, Jiwon Ma, et al.
Pageof 1