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ACS Applied Materials & Interfaces|May 24, 2018
Atomic Layer Epitaxy of Aluminum Nitride: Unraveling the Connection between Hydrogen Plasma and Carbon ContaminationSteven C Erwin, John L LyonsJournal of Physics. Condensed Matter : an Institute of Physics Journal|April 9, 2025
Deep chalcogen donors and electron localization in aluminum nitrideJohn L Lyons, Joel B VarleyACS Applied Materials & Interfaces|October 16, 2020
Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial GrowthSteven C Erwin, John L LyonsThe Journal of Physical Chemistry Letters|December 21, 2022
In<sub>2</sub>Se<sub>3</sub>, In<sub>2</sub>Te<sub>3</sub>, and In<sub>2</sub>(Se,Te)<sub>3</sub> Alloys as Photovoltaic MaterialsWei Li, Xue-Fen Cai, Nicholas Valdes, et al.ACS Omega|April 21, 2020
Localized Strain Measurement in Molecular Beam Epitaxially Grown Chalcogenide Thin Films by Micro-Raman SpectroscopyQiu Li, Yong Wang, Tiantian Li, et al.The Journal of Physical Chemistry. A|November 13, 2018
Unique Surface Enhanced Raman Scattering Substrate for the Study of Arsenic Speciation and DetectionShuyu Xu, Fernando P Sabino, Anderson Janotti, et al.ACS Nano|February 24, 2026
Machine Learning Phonon Spectra for Fast and Accurate Optical Lineshapes of DefectsMark E Turiansky, John L Lyons, Noam BernsteinThe Journal of Physical Chemistry. C, Nanomaterials and Interfaces|July 31, 2024
Tuning Excitonic Properties of Monochalcogenides via Design of Janus StructuresMateus B P Querne, Alexandre C Dias, Anderson Janotti, et al.ACS Applied Materials & Interfaces|January 26, 2018
Interfacial Cation-Defect Charge Dipoles in Stacked TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Gate DielectricsLiangliang Zhang, Anderson Janotti, Andrew C Meng, et al.Physical Review Letters|May 1, 2012
First-principles optical spectra for F centers in MgOPatrick Rinke, André Schleife, Emmanouil Kioupakis, et al.Pageof 6