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Nanoscale|October 16, 2023
Probing charge traps at the 2D semiconductor/dielectric interfaceJohn Wellington John, Abhishek Mishra, Rousan Debbarma, et al.
Nanotechnology|April 19, 2022
Self-powered, low-noise and high-speed nanolayered MoSe2/p-GaN heterojunction photodetector from ultraviolet to near-infrared wavelengthsHarmanpreet Kaur Sandhu, John Wellington John, Alka Jakhar, et al.
Nanotechnology|October 17, 2024
Room-temperature infrared photoluminescence and broadband photodetection characteristics of Ge/GeSi islands on silicon-on-insulatorSudarshan Singh, John Wellington John, Arijit Sarkar, et al.
Nanotechnology|April 12, 2021
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistorsJohn Wellington John, Veerendra Dhyani, Sudarshan Singh, et al.
Nanotechnology|May 23, 2020
Broadband infrared photodetector based on nanostructured MoSe2-Si heterojunction extended up to 2.5 μm spectral rangeJohn Wellington John, Veerendra Dhyani, Sarmistha Maity, et al.
ACS Applied Materials & Interfaces|June 6, 2024
Nanoironing van der Waals Heterostructures toward Electrically Controlled Quantum DotsTeymour Talha-Dean, Yaoju Tarn, Subhrajit Mukherjee, et al.
ACS Nano|February 24, 2025
Toward Phonon-Limited Transport in Two-Dimensional Transition Metal Dichalcogenides by Oxygen-Free FabricationSubhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao, et al.
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