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Nanotechnology|August 25, 2023
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral rangeDavid van Treeck, Jonas Lähnemann, Oliver Brandt, et al.Nano Letters|September 30, 2017
Near-Infrared Intersubband Photodetection in GaN/AlN NanowiresJonas Lähnemann, Akhil Ajay, Martien I Den Hertog, et al.Physical Review Letters|December 9, 2017
Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide SemiconductorsPatrick Vogt, Oliver Brandt, Henning Riechert, et al.Physical Review Letters|July 30, 2011
Epitaxial interfaces between crystallographically mismatched materialsSteven C Erwin, Cunxu Gao, Claudia Roder, et al.Nanoscale Advances|September 22, 2022
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimationSergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann, et al.Journal of the American Chemical Society|June 27, 2013
Photoelectrochemical properties of (In,Ga)N nanowires for water splitting investigated by in situ electrochemical mass spectroscopyJumpei Kamimura, Peter Bogdanoff, Jonas Lähnemann, et al.Nanotechnology|October 8, 2016
Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetimeJonas Lähnemann, Timur Flissikowski, Martin Wölz, et al.Nano Letters|January 21, 2016
Radial Stark Effect in (In,Ga)N NanowiresJonas Lähnemann, Pierre Corfdir, Felix Feix, et al.Nanotechnology|June 6, 2020
Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabricationMaria Spies, Zahra Sadre Momtaz, Jonas Lähnemann, et al.Nano Letters|May 17, 2024
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor HeterostructuresPhilipp John, Achim Trampert, Duc Van Dinh, et al.Pageof 2