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Nanoscale|September 15, 2017
Scaling behavior of oxide-based electrothermal threshold switching devicesDasheng Li, Jonathan M Goodwill, James A Bain, et al.
ACS Applied Materials & Interfaces|March 16, 2017
Electro-Thermal Model of Threshold Switching in TaOx-Based DevicesJonathan M Goodwill, Abhishek A Sharma, Dasheng Li, et al.
ACS Applied Electronic Materials|May 1, 2023
Temperature Distribution in TaO Resistive Switching Devices Assessed In Operando by Scanning Thermal MicroscopyJingjia Meng, Jonathan M Goodwill, Evgheni Strelcov, et al.
ACS Applied Materials & Interfaces|May 23, 2020
Exchange of Ions across the TiN/TaO Interface during Electroformation of TaO-Based Resistive Switching DevicesYuanzhi Ma, David A Cullen, Jonathan M Goodwill, et al.
Nanotechnology|August 25, 2017
ON-state evolution in lateral and vertical VO2 threshold switching devicesDasheng Li, Abhishek A Sharma, Nikhil Shukla, et al.
Nature Communications|April 11, 2019
Spontaneous current constriction in threshold switching devicesJonathan M Goodwill, Georg Ramer, Dasheng Li, et al.
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