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Jong Hwa Ryu

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Nanotechnology|September 3, 2021

Atomic layer deposited Al<sub>2</sub>O<sub>3</sub>passivation layer for few-layer WS<sub>2</sub>field effect transistorsYoung Gyu You, Dong Ho Shin, Jong Hwa Ryu, et al.

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Search research articles

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Nanotechnology|September 3, 2021

Atomic layer deposited Al<sub>2</sub>O<sub>3</sub>passivation layer for few-layer WS<sub>2</sub>field effect transistorsYoung Gyu You, Dong Ho Shin, Jong Hwa Ryu, et al.

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