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Joong-Sik Kim

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Journal of Nanoscience and Nanotechnology|December 1, 2007
Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGeYoung-Kyu Kim, Kwan-Sun Yoon, Joong-Sik Kim, et al.
Journal of Nanoscience and Nanotechnology|December 1, 2007
Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-siliconHan-Geon Kim, Joong-Sik Kim, Young-Kyu Kim, et al.
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Showing results (1-10 of 2) with videos related to

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Pageof 1
Journal of Nanoscience and Nanotechnology|December 1, 2007
Atomistic simulation of boron diffusion with charged defects and diffusivity in strained Si/SiGeYoung-Kyu Kim, Kwan-Sun Yoon, Joong-Sik Kim, et al.
Journal of Nanoscience and Nanotechnology|December 1, 2007
Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-siliconHan-Geon Kim, Joong-Sik Kim, Young-Kyu Kim, et al.
Pageof 1