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Materials (Basel, Switzerland)|February 26, 2020
Memristors for Neuromorphic Circuits and Artificial Intelligence ApplicationsEnrique Miranda, Jordi SuñéMicromachines|February 25, 2022
SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching DevicesFernando Leonel Aguirre, Jordi Suñé, Enrique MirandaNano Letters|August 5, 2008
Modeling transport in ultrathin Si nanowires: charged versus neutral impuritiesRiccardo Rurali, Troels Markussen, Jordi Suñé, et al.ACS Applied Electronic Materials|February 16, 2026
Trap-Controlled Conduction and Metal-Insulator Transition in Superconducting Cuprate MemristorsThomas Günkel, Enrique Miranda, Lluís Balcells, et al.Materials (Basel, Switzerland)|July 25, 2019
On the Application of a Diffusive Memristor Compact Model to Neuromorphic CircuitsAgustín Cisternas Ferri, Alan Rapoport, Pablo I Fierens, et al.Nanoscale Research Letters|July 9, 2016
Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO2/Pt RRAM DeviceMeiyun Zhang, Shibing Long, Yang Li, et al.Nanoscale Research Letters|October 27, 2015
Conductance Quantization in Resistive Random Access MemoryYang Li, Shibing Long, Yang Liu, et al.Scientific Reports|October 15, 2013
Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAMShibing Long, Luca Perniola, Carlo Cagli, et al.Small (Weinheim an Der Bergstrasse, Germany)|March 3, 2025
Field-Induced Phase Transitions in Cuprate Superconductors for Cryogenic in-Memory ComputingThomas Günkel, Jordi Alcalà, Alejandro Fernández, et al.Scientific Reports|September 13, 2017
Investigation on the Conductive Filament Growth Dynamics in Resistive Switching Memory via a Universal Monte Carlo SimulatorYu Li, Meiyun Zhang, Shibing Long, et al.Pageof 2