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Journal of Nanoscience and Nanotechnology|May 15, 2015
Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMTJun-Woo Heo, Young-Jin Kim, Hyun-Seok KimJournal of Nanoscience and Nanotechnology|January 5, 2016
Analysis of Hyperabrupt and Uniform Junctions in GaAs for the Application of Varactor DiodeJun-Woo Heo, Sejun Hong, Seok-Gyu Choi, et al.Journal of Nanoscience and Nanotechnology|May 12, 2015
Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performanceMansoor Ali Khan, Jun-Woo Heo, Hyun-Seok Kim, et al.Journal of Nanoscience and Nanotechnology|January 5, 2016
DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate StructureSejun Hong, Abu ul Hassan Sarwar Rana, Jun-Woo Heo, et al.Journal of Nanoscience and Nanotechnology|September 17, 2015
Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide ApplicationsHyun-Seok Kim, Jun-Woo Heo, Seok-Gyu Chol, et al.Pageof 1