Showing results (1-10 of 11) with videos related to

Sort By:
Pageof 2
Nanotechnology|November 22, 2019
Roadmap on halide perovskite and related devicesDong-Nyuk Jeong, June-Mo Yang, Nam-Gyu Park
Nanoscale|September 3, 2021
A layered (n-C4H9NH3)2CsAgBiBr7 perovskite for bipolar resistive switching memory with a high ON/OFF ratioSo-Yeon Kim, June-Mo Yang, Sun-Ho Lee, et al.
Nanoscale|July 20, 2019
Effect of interlayer spacing in layered perovskites on resistive switching memorySo-Yeon Kim, June-Mo Yang, Eun-Suk Choi, et al.
ACS Applied Materials & Interfaces|July 4, 2018
All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive MemoryCan Cuhadar, Seul-Gi Kim, June-Mo Yang, et al.
Nanoscale|March 21, 2019
Perovskite-related (CH3NH3)3Sb2Br9 for forming-free memristor and low-energy-consuming neuromorphic computingJune-Mo Yang, Eun-Suk Choi, So-Yeon Kim, et al.
Nanoscale|July 24, 2019
The effect of compositional engineering of imidazolium lead iodide on the resistive switching propertiesEun-Suk Choi, June-Mo Yang, Seul-Gi Kim, et al.
Nanoscale|October 11, 2017
Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskiteJa-Young Seo, Jaeho Choi, Hui-Seon Kim, et al.
Nanoscale|October 28, 2017
Correction: Wafer-scale reliable switching memory based on 2-dimensional layered organic-inorganic halide perovskiteJa-Young Seo, Jaeho Choi, Hui-Seon Kim, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|March 21, 2022
Mixed-Dimensional Formamidinium Bismuth Iodides Featuring In-Situ Formed Type-I Band Structure for Convolution Neural NetworksJune-Mo Yang, Ju-Hee Lee, Young-Kwang Jung, et al.
Nanoscale Horizons|October 20, 2021
Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumptionJune-Mo Yang, Young-Kwang Jung, Ju-Hee Lee, et al.
Pageof 2